Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2006-04-28
2010-11-02
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S455000, C438S456000
Reexamination Certificate
active
07825011
ABSTRACT:
The invention relates to a method of manufacturing a semiconductor device (10) comprising a substrate (11) and a semiconductor body (12) in which at least one semiconductor element (1) is formed, wherein on the substrate (11) a semiconductor layer (2) is formed comprising a mixed crystal of silicon and germanium, further called the silicon-germanium layer (2) and having a lower surface close to the substrate (11) and an upper surface more remote from the substrate (11), and wherein the silicon-germanium layer (2) is subjected to an oxidizing treatment at a surface of the silicon-germanium layer (2) while the other surface of the silicon-germanium layer (2) is protected against the oxidizing treatment by a blocking layer (3). According to the invention, the blocking layer (3) is formed on the upper surface of the silicon-germanium layer (2), a cavity (5) is formed in the semiconductor body below the silicon-germanium layer (2) and the lower surface of the silicon-germanium layer (2) is subjected to the oxidizing treatment through the cavity (2). In this way, a device10may be obtained in which the surface of the silicon-germanium layer (2) after the oxidizing treatment does not suffer from roughening and/or germanium pile up. This enables e.g. to manufacture in particular a MOSFET on top of or in the silicon-germanium layer (2) with excellent properties and high yield.
REFERENCES:
patent: 2002/0025636 (2002-02-01), Ju
patent: 2004/0242006 (2004-12-01), Bedell et al.
Tezuka, T; et al “Fabrication of a Strained is on Sub-10-MM-Thick SiGe-on-Insulator Virtual Substrate” Materials Science and Engineering B, Elsevier Sequoia, Lausanne, CH, vol. 89, No. 1-3, Feb. 14, 2002, pp. 360-363.
Meunier-Beillard Philippe
Sonsky Jan
Diallo Mamadou
NXP B.V.
Richards N Drew
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