Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2007-05-15
2007-05-15
Smith, Bradley K. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257S065000, C257SE29151
Reexamination Certificate
active
11221773
ABSTRACT:
A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing having an organic matter removing effect, forming a clean oxide film, after removing a natural oxide film formed on a semiconductor film surface. TFTs having little dispersion in their electrical characteristics can be obtained by using the semiconductor film thus obtained in active layers of the TFTs, and the electrical properties can be improved. In addition, deterioration in productivity and throughput can be reduced to a minimum by using a semiconductor manufacturing apparatus of the present invention.
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Makita Naoki
Matsuo Takuya
Nakajima Setsuo
Shiga Aiko
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Sharp Kabushiki Kaisha
Smith Bradley K.
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