Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1986-01-06
1988-02-02
Kettle, John E.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430317, 430326, G03C 500
Patent
active
047228822
ABSTRACT:
A method of manufacturing a semiconductor device, in which method a pattern is etched by a dry etching process, for example, in a substrate protected by a resist pattern which is the negative of the pattern to be etched. In order to obtain a resist pattern which has adequate resistance to dry etching and which has been produced from a resist film having a high sensitivity, the resist pattern is produced in two stages. First a pattern is formed in a resist film present on a substrate, which resist film has been formed from a polymer made by polymerizing a monomer of the structure ##STR1## wherein R.sub.1 is an alkyl group, Cl, Br, CN, H or R.sub.2, R.sub.2 is --COCl, --COBr, --COOH or --CONH.sub.2, and R.sub.1 does not react with R.sub.2. Then the material of the resist pattern is reacted with a mono- or poly-functional organic compound, with an organic siloxane containing SiH groups or other Si-containing functional groups which react with the resist pattern material, or with a metallo-organic compound. The functional group(s) of the mono- or poly-functional compound reacts with the group R.sub.2 of the resist pattern material so as to introduce an aromatic group or other dry-etch resistant group or atom into the resist pattern material.
REFERENCES:
patent: 3652274 (1972-03-01), Verelst et al.
patent: 4125650 (1978-11-01), Chiu et al.
patent: 4552833 (1985-11-01), Ito et al.
patent: 4613398 (1986-09-01), Chiong et al.
Dees Jos,e G.
Kettle John E.
Spain Norman N.
U.S. Philips Corporation
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