Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1992-05-08

1994-01-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 56, 437 59, 437235, 148DIG9, H01L 21265

Patent

active

052780848

ABSTRACT:
A method for manufacturing BiCMOS semiconductor devices in which an oxide layer formed on the surf ace of a semiconductor substrate for the purpose of facilitating formation of spacers adjacent to sidewalls of the gates of the MOS transistors thereof is only partially removed, by using a dry etching process, to thereby leave a residual oxide layer, which is then removed, by using a wet etching process, to thereby form the spacers. Alternatively, all portions of the oxide layer except a portion thereof overlying the base-emitter region of the bipolar transistor of the BiCMOS device is removed, thereby precluding the necessity of etching the oxide layer away at the base-emitter junction. In either case, the DC forward current gain Hfe and linearity of the bipolar transistor of the BiCMOS device are enhanced.

REFERENCES:
patent: 4764482 (1988-08-01), Hsu
patent: 5045912 (1991-09-01), Ohki
patent: 5079177 (1992-01-01), Lage et al.
patent: 5124817 (1992-06-01), Brassington et al.

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