Method of manufacturing a semiconductor device

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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20412965, 427259, 156DIG64, 1566591, 156653, B05D 132

Patent

active

045606420

ABSTRACT:
A method of manufacturing a semiconductor device which comprises the step of applying a silicon carbide film having a prescribed perforated pattern as a masking film selectively to etch a silicon dioxide film or diffuse an impurity into a substrate.

REFERENCES:
patent: 3465209 (1969-09-01), Denning et al.
patent: 3502517 (1970-03-01), Sussmann
patent: 3904454 (1975-09-01), Hagdo et al.
Bersin, Solid State Technology, 5/76, pp. 31-36.
Weaver, JBM Technical Disclosure Bulletin, vol. 17, No. 2, 7/74.

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