Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1995-05-15

1998-12-29

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438183, 438309, 438926, 438951, 148DIG100, H01L 21338

Patent

active

058540970

ABSTRACT:
A device having, at least, a first film having a surface on which neither a natural oxide film nor impurity grains caused by a resist residue is or are present, and a conductive material layer formed on a surface adjacent to the surface of the first film, wherein an insulative compound film is formed on a surface of the conductive material layer by a surface reaction with the conductive material layer, and a predetermined second film required for an arrangement is formed on the surface of the first film.

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Werner et al., "Modern Bipolar Technology for Gate Array and Memory Applications", Siemans Research and Development Reports, vol. 17, No. 5, 1988, pp. 221-226.

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