Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1983-07-27

1985-02-12

Louie, Won H.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430312, 430328, 430330, 430326, G03C 500

Patent

active

044991770

ABSTRACT:
A method of manufacturing a semiconductor device in which a photosensitive lacquer layer is developed in a lye solution, and comprises a polymeric material and a sensitizer with a diazo group and a ketone group. This lacquer layer is formed on a substrate surface. After a patterning irradiation, but before development, the lacquer layer is subjected to an intermediate treatment comprising two irradiations. These irradiations result in that differences in solubility in lye are obtained in the direction of thickness in the parts of the lacquer layer which were not exposed during the patterning irradiation. In this manner, it is possible to realize lacquer patterns with different profiles.

REFERENCES:
patent: 4212935 (1980-07-01), Canavello et al.
Bergin et al., IBM Tech. Discl. Bulletin, vol. 18, No. 5, Oct. 1975, p. 1395.

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