Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1981-07-09

1983-02-22

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 1566591, 156668, 204192E, 252 791, 427 38, 430313, 430329, B44C 122, C03C 1500, C03C 2506

Patent

active

043746993

ABSTRACT:
A method of manufacturing a semiconductor device in which an organic lacquer layer which is locally present on a substrate is etched by bringing the layer into contact with constituents of plasma which is formed in a gas mixture which contains a halogen compound and an oxygen compound. If the mixture contains more than 25% by volume of an oxygen compound from the group CO.sub.2 and NO, the organic lacquer layer can be etched away from 500 to 1000 times faster than poly Si.

REFERENCES:
patent: 3867216 (1975-02-01), Jacob
patent: 4260649 (1981-04-01), Dension

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