Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1998-05-29

1999-11-23

Niebling, John F.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438455, 438459, H01L 2130

Patent

active

059899743

ABSTRACT:
A method of manufacturing a semiconductor device having a region which is partially thinner than the rest thereof is disclosed. A semiconductor thin layer is formed on an insulating layer by an annealing treatment after implanting ions into the semiconductor substrate at a predetermined depth. A semiconductor material is formed by epitaxial growing to a predetermined thickness on the semiconductor thin layer. The the insulating layer or eliminating the insulating layer and a part of the semiconductor substrate under the insulating layer is eliminated by an etching operation.

REFERENCES:
patent: 4510671 (1985-04-01), Kurtz et al.
patent: 5827755 (1998-10-01), Yonehara et al.
patent: 5854123 (1998-12-01), Sato et al.
Ben Kloeck et al., "Study of Electrochemical Etch-Stop for High-Precision Thickness Control of Silicon Membranes", IEEE Transactions on Electron Devices, vol. 36, No. 4, Apr. 1989, pp. 4-10.

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