Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1991-04-03

1993-01-12

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156DIG70, 422245, 437107, 437108, 437937, C30B 2500

Patent

active

051787180

ABSTRACT:
The invention relates to a method of manufacturing a semiconductor device by means of a cyclical epitaxial process from a gas phase by which alternate monoatomic layers of the III atom and the V atom of a III-V compound are formed. Layers of very good quality are obtained when atomic hydrogen is conducted to the substrate on which epitaxial growth takes place during a part of each cycle in which the gas phase is free from a compound of the III atom.

REFERENCES:
patent: 3146137 (1964-08-01), Ballwin
patent: 3218205 (1965-11-01), Ruehrwein
patent: 4062706 (1977-12-01), Ruehrwein
patent: 4368098 (1983-01-01), Manasevit
patent: 4767494 (1988-08-01), Kobayashi et al.
patent: 4793872 (1988-12-01), Meunier et al.
patent: 4902643 (1990-02-01), Shimawaki

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