Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1981-07-09

1983-05-03

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156657, 1566591, 204192E, 252 791, H01L 21306, C23F 102

Patent

active

043819672

ABSTRACT:
A method of manufacturing a semiconductor device where a layer which is present on a substrate and which is locally covered with an organic lacquer layer is etched by bringing the layer into contact with constituents of a plasma which is formed in a gas mixture containing a halogen compound and an oxygen compound. The rate at which the organic lacquer layer is removed by the constituents of the plasma is substantially reduced by the addition of from 1 to 15% by vol. of CO to this gas mixture.

REFERENCES:
patent: 4260649 (1981-04-01), Denison et al.

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