Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1997-01-16

2000-08-08

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 49, 257 50, 257 51, 257 52, 257 63, 257 64, 257 65, 257506, H01L 21428

Patent

active

061005622

ABSTRACT:
A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film 103 disposed on a quartz substrate 101. A crystal silicon film 105 is obtained by this heat treatment. Then, a oxide film 106 is formed by wet oxidation. At this time, the nickel element is gettered to the oxide film 106 by an action of fluorite. Then, the oxide film 106 is removed. Thereby, a crystal silicon film 107 having low concentration of the metal element and a high crystallinity can be obtained.

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