Method of manufacturing a semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438785, 438791, H01L 2144

Patent

active

061001937

ABSTRACT:
A MOSFET in which the gate electrode is formed of a polycrystalline silicon film, a silicon nitride film having a nitrogen surface density of lens than 8.times.10.sup.14 cm.sup.-2, and a tungsten film--these films formed one upon another in the order mentioned. The gate electrode thus formed, serves to shorten the delay time of the MOSFET.

REFERENCES:
patent: 5503704 (1996-04-01), Bower et al.
patent: 5529954 (1996-06-01), Iijima et al.
patent: 5593924 (1997-01-01), Apte et al.
patent: 5668394 (1997-09-01), Lur et al.
patent: 5976975 (1999-07-01), Joshi et al.
patent: 5981380 (1999-11-01), Trivedi et al.

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