Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-09-24
2000-08-08
Nelms, David
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438785, 438791, H01L 2144
Patent
active
061001937
ABSTRACT:
A MOSFET in which the gate electrode is formed of a polycrystalline silicon film, a silicon nitride film having a nitrogen surface density of lens than 8.times.10.sup.14 cm.sup.-2, and a tungsten film--these films formed one upon another in the order mentioned. The gate electrode thus formed, serves to shorten the delay time of the MOSFET.
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patent: 5593924 (1997-01-01), Apte et al.
patent: 5668394 (1997-09-01), Lur et al.
patent: 5976975 (1999-07-01), Joshi et al.
patent: 5981380 (1999-11-01), Trivedi et al.
Akasaka Yasushi
Iijima Tadashi
Nakajima Kazuaki
Suehiro Shintaro
Suguro Kyoichi
Berry Renee R.
Kabushiki Kaisha Toshiba
Nelms David
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