Method of manufacturing a semiconductor device

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

29591, 156656, 357 71, 427 90, C23F 102

Patent

active

043080901

ABSTRACT:
A method of manufacturing a semiconductor device having a multi-layer wiring system includes the steps of providing a first pattern of conductive regions on a major surface, providing an intermediate conductive layer over the major surface and the first pattern conductive regions, providing a second pattern of conductive tracks on the intermediate layer, and selectively etching the intermediate layer using the second pattern of tracks as an etching mask to completely remove the intermediate layer by underetching below portions of the second pattern tracks crossing over portions of the first pattern of conductive region where no electrical interconnection between the first and second conductive patterns is desired, while only partially removing the intermediate layer by underetching below portions of the second pattern of tracks crossing over portion of the first pattern of semiconductor regions where an electrical interconnection between the first and second conductor patterns is desired. In this manner, at least two separate parts of the first pattern of conductive regions are conductively connected at selected locations by a part of the second pattern of tracks in a method in which the conductive tracks of the uppermost level are used at a self-aligning etching mask.

REFERENCES:
patent: 3647585 (1972-03-01), Fritzinger et al.
patent: 3715785 (1973-02-01), Brown et al.
patent: 3801388 (1974-04-01), Akiyama et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1017240

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.