Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2009-09-28

2011-12-13

Fahmy, Wael (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S170000

Reexamination Certificate

active

08076188

ABSTRACT:
A manufacturing method of a semiconductor device including a protecting element with a p-n junction which can be formed in the same process as that of a p-channel junction FET while the junction FET is formed in simple manufacturing process is provided. In the method of manufacturing semiconductor device composed of compound semiconductor having a p-channel FET and protective element, an n-type channel layer2, n+-type contact layer3, n-type semiconductor layer5, p-type channel layer7, p+-type contact layer8are laminated on a substrate1to form a semiconductor laminate portion10. A portion of the semiconductor laminate portion10is removed by etching to expose the n+-type contact layer3and gate electrode13of a junction p-channel FET22is formed on the surface of the exposed n+-type contact layer3. A protective element23is formed by a portion of the semiconductor10.

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