Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-08-27
2010-06-15
Chen, Jack (Department: 2893)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S639000, C257SE21495
Reexamination Certificate
active
07737027
ABSTRACT:
Exuding of a interconnecting material to a substrate, which occurs because of a thinned state of and a beak in a barrier metal layer is prevented, irrespective of a laminated state of the barrier metal layer. In the present invention, a protective layer is formed on a side wall by using an insulating film or the like after the deposition of the barrier metal layer, whereby the interconnecting material can be prevented from exuding to the substrate due to influence of heat treatment such as alloying, irrespective of the laminated state of the side wall of the contact hole and the barrier metal layer. Further, the formation of the protective layer allows the side wall to be smoother to thereby improve coverage of the interconnecting material at the same time.
REFERENCES:
patent: 2006/0151887 (2006-07-01), Oh et al.
Patent Abstracts of Japan, Publication No. 08-330252, Publication Date, Dec. 13, 1996.
Osanai Jun
Tsukamoto Akiko
Adams & Wilks
Chen Jack
Seiko Instruments Inc.
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