Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2006-08-03
2009-11-17
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S308000, C438S162000, C438S166000
Reexamination Certificate
active
07618904
ABSTRACT:
When a laser beam is irradiated onto a semiconductor film, a steep temperature gradient is produced between a substrate and the semiconductor film. For this reason, the semiconductor film contracts, so that a warp in the film occurs. Therefore, the quality of a resulting crystalline semiconductor film sometimes deteriorates. According to the present invention, it is characterized in that, after laser beam crystallization on the semiconductor film, heat treatment is carried out so as to reduce the warp in the film. Since the substrate contracts by the heat treatment, the warp in the semiconductor film is lessened, so that the physical properties of the semiconductor film can be improved.
REFERENCES:
patent: 4256681 (1981-03-01), Lindmayer
patent: 4814292 (1989-03-01), Sasaki et al.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5639698 (1997-06-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5663077 (1997-09-01), Adachi et al.
patent: 5773327 (1998-06-01), Yamazaki et al.
patent: 5824573 (1998-10-01), Zhang et al.
patent: 5854096 (1998-12-01), Ohtani et al.
patent: 5879977 (1999-03-01), Zhang et al.
patent: 5904770 (1999-05-01), Ohtani et al.
patent: 5907770 (1999-05-01), Yamazaki et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5923997 (1999-07-01), Mitanaga et al.
patent: 5948496 (1999-09-01), Kinoshita et al.
patent: 5953597 (1999-09-01), Kusumoto et al.
patent: 6014944 (2000-01-01), Aklufi et al.
patent: 6066516 (2000-05-01), Miyasaka
patent: 6184068 (2001-02-01), Ohtani et al.
patent: 6197623 (2001-03-01), Joo et al.
patent: 6249330 (2001-06-01), Yamaji et al.
patent: 6281057 (2001-08-01), Aya et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6319761 (2001-11-01), Zhang et al.
patent: 6326248 (2001-12-01), Ohtani et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6380687 (2002-04-01), Yamazaki
patent: 6388377 (2002-05-01), Kobayashi et al.
patent: 6455360 (2002-09-01), Miyasaka
patent: 6509579 (2003-01-01), Takeya et al.
patent: 6552496 (2003-04-01), Yamazaki
patent: 6559036 (2003-05-01), Ohtani et al.
patent: 6770518 (2004-08-01), Yamazaki et al.
patent: 6774573 (2004-08-01), Yamazaki
patent: 6872638 (2005-03-01), Yamazaki et al.
patent: 6902616 (2005-06-01), Yamazaki et al.
patent: 7160784 (2007-01-01), Yamazaki et al.
patent: 7256422 (2007-08-01), Yamazaki
patent: 2001/0003659 (2001-06-01), Aya et al.
patent: 2002/0013114 (2002-01-01), Ohtani et al.
patent: 2002/0079833 (2002-06-01), Kobayashi et al.
patent: 2002/0119585 (2002-08-01), Yamazaki et al.
patent: 2002/0127827 (2002-09-01), Yamazaki et al.
patent: 2002/0146868 (2002-10-01), Miyasaka
patent: 2003/0089909 (2003-05-01), Miyairi et al.
patent: 2005/0158930 (2005-07-01), Yamazaki et al.
patent: 2005/0214991 (2005-09-01), Yamazaki et al.
patent: 2008/0024069 (2008-01-01), Yamazaki
patent: 1237318 (1999-12-01), None
patent: 1279518 (2001-01-01), None
patent: 0 651 431 (1995-05-01), None
patent: 0 969 701 (2000-01-01), None
patent: 1 065 723 (2001-01-01), None
patent: 1 235 259 (2002-08-01), None
patent: 06-163409 (1994-06-01), None
patent: 07-183540 (1995-07-01), None
patent: 08-051215 (1996-02-01), None
patent: 09-063984 (1997-03-01), None
patent: 09-090425 (1997-04-01), None
patent: 10-270360 (1998-10-01), None
patent: 11-074536 (1999-03-01), None
patent: 11-109406 (1999-04-01), None
patent: 2000-114172 (2000-04-01), None
patent: 2000-114173 (2000-04-01), None
patent: 2000-114526 (2000-04-01), None
patent: 2000-114527 (2000-04-01), None
patent: 2000-150890 (2000-05-01), None
patent: 2002-076349 (2002-03-01), None
patent: 2002-305148 (2002-10-01), None
patent: 1997-008659 (1997-02-01), None
patent: 2002-69175 (2002-08-01), None
Australian Search and Examination Report; Singapore Patent Application No. SG 200505022-4, Filed Feb. 18, 2002; Dated Mar. 12, 2008.
Office Action dated Jun. 19, 2003 for U.S. Appl. No. 10/078,240, (filed Feb. 20, 2002).
Amendment filed on Nov. 19, 2003 in response to Office Action dated Jun. 19, 2003 in U.S. Appl. No. 10/078,240, (filed Feb. 20, 2002).
Search Report of Counterpart Singapore Application No. 200200837-3; Apr. 20, 2004.
Written Opinion of Counterpart Singapore Application No. 200200837-3; Apr. 20, 2004.
Kimura et al., Device Simulation of Interface Roughness in Laser-Crystallized p-Si TFT's, pp. 263-266, 1999, AM-LCD.
Abe et al., “High-Performance Poly-Crystalline Silicon TFTs Fabricated Using the SPC and ELA Methods”, pp. 85-88, Jul. 9-10, 1998, AM-LCD.
Specifications and Drawings for U.S. Appl. No. 10/078,240, “Method of Manufacturing a Semiconductor Device” Filing Date: Feb. 20, 2002, Inventors: Shunpei Yamazaki et al.
Specifications and Drawings for U.S. Appl. No. 10/056,054, Method for Manufacturing a Semiconductor Device.
Office Action, “Notice of the Reasons for Rejection” No. 2002-0010470 dated Dec. 13, 2007 from the Korean Intellectual Property Office (with Translation).
Office Action (Application No. 200610006615.0; CN5561/5562D1), dated Jul. 4, 2008 with English translation.
Mitsuki Toru
Takano Tamae
Yamazaki Shunpei
Costellia Jeffrey L.
Luu Chuong A.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4134544