Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2005-06-30
2009-08-11
Menz, Douglas M (Department: 2891)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S381000, C257SE29111, C257SE21536
Reexamination Certificate
active
07572711
ABSTRACT:
In an embodiment, a simplified method of manufacturing a semiconductor device reduces a step between cell and peripheral areas. First and second openings are formed through a plurality of thin layers including a support layer on a substrate. A storage electrode and a guide ring are formed on sidewalls and bottoms of the first and second openings, respectively. A support pattern is formed so that the support layer in the cell area is partially etched and the support layer in the peripheral area remains un-etched, thus the support pattern supports and surrounds the storage electrodes adjacent to each other in the cell area and prevents an etching of a layer underlying the support layer in the peripheral area. A dielectric layer and a plate electrode are formed on the storage electrode to complete a semiconductor device with the reduced step.
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English language abstract of Korean Publication No. 10-0348297.
English language abstract of Korean Publication No. 2002-0073942.
English language abstract of Korean Publication No. 2004-0022648.
Jeong Sang-Sup
Park Jong-Chul
Marger & Johnson & McCollom, P.C.
Menz Douglas M
Samsung Electronics Co,. Ltd.
Such Matthew W
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