Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2006-02-03

2009-10-20

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S313000, C430S394000, C430S323000, C430S324000, C430S316000

Reexamination Certificate

active

07604926

ABSTRACT:
A method of manufacturing a semiconductor device, comprises forming a first mask pattern on an under-layer region, forming a plurality of dummy-line patterns on the under-layer region, the dummy-line patterns being arranged at a first pitch, forming second mask patterns having mask parts provided on long sides of the dummy-line patterns, removing the dummy-line patterns, and etching the under-layer region by using the first mask pattern and the mask parts as a mask.

REFERENCES:
patent: 5328810 (1994-07-01), Lowrey et al.
patent: 6063688 (2000-05-01), Doyle et al.
patent: 6475891 (2002-11-01), Moon
patent: 6475892 (2002-11-01), Bhakta
patent: 2004/0165443 (2004-08-01), Harari

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4062826