Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2007-07-03

2009-10-13

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S305000, C438S649000, C257SE21200, C257SE21130

Reexamination Certificate

active

07601635

ABSTRACT:
For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gate insulating film disposed over the main surface of a semiconductor substrate, and patterning them to form a gate electrode having a stacked structure consisting of the polycrystalline silicon film and tungsten silicide film. The polycrystalline silicon film has two regions, one region formed by an impurity-doped polycrystalline silicon and the other one formed by non-doped polycrystalline silicon. The tungsten silicide film is deposited so that the resistivity of it upon film formation would exceed 1000 μΩcm.

REFERENCES:
patent: 6294435 (2001-09-01), Chu et al.
patent: 7078342 (2006-07-01), Pan et al.
patent: 2001/0008796 (2001-07-01), Matsudo et al.
patent: 05-343352 (1993-12-01), None
patent: 07-078991 (1995-03-01), None

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