Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2005-05-31

2008-12-23

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S386000, C438S398000, C438S397000, C257S301000, C257SE21018

Reexamination Certificate

active

07468306

ABSTRACT:
A semiconductor substrate is provided comprising a plurality of contact pads arranged on a horizontal surface of the semiconductor substrate. Pillars of a first sacrificial material are formed on the contact pads. A first dielectric layer is deposited thus covering at least said pillars. A first conductive layer is deposited between said pillars covered with the first dielectric layer. The pillars are removed thus providing trenches in the first conductive layer having walls covered with the dielectric layer. A second conductive layer is deposited on the first dielectric layer in the trench. A second dielectric layer is deposited such that at least the second conductive layer in the trench is covered by the second dielectric layer. A third conductive layer is deposited on the second dielectric layer.

REFERENCES:
patent: 6177351 (2001-01-01), Beratan et al.
patent: 6437385 (2002-08-01), Bertin et al.
patent: 6767788 (2004-07-01), Kim
patent: 6946357 (2005-09-01), Sandhu et al.
patent: 2003/0064557 (2003-04-01), Juengling
patent: 2003/0087501 (2003-05-01), Park
patent: 2003/0155626 (2003-08-01), Ireland et al.
patent: 2004/0214402 (2004-10-01), Seo
patent: 2005/0026361 (2005-02-01), Graettinger et al.
patent: 2005/0215002 (2005-09-01), Violette
patent: 2006/0115978 (2006-06-01), Specht et al.
patent: 2006/0160300 (2006-07-01), Weis
patent: 2006/0267139 (2006-11-01), Thies et al.
patent: 296484 (1997-01-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4020321