Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2005-10-05

2008-10-21

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S386000, C438S382000, C438S389000

Reexamination Certificate

active

07439150

ABSTRACT:
In one embodiment, to fabricate a semiconductor device, a first insulation interlayer is formed on a substrate. A contact pad is formed through the first insulation interlayer. An etch stop layer and a second insulation interlayer are sequentially formed on the first insulation interlayer and the pad. A contact hole exposing at least a portion of the contact pad is formed by partially etching the second insulation interlayer and the etch stop layer. A preliminary lower electrode is formed in the hole. The preliminary lower electrode is isotropically etched to form a lower electrode contacting the contact pad. A dielectric layer and an upper electrode are sequentially formed on the lower electrode.

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English language abstract of Japanese Publication No. 11-354747.
English language abstract of Korean Publication No. 2001-54265.
English language abstract of Korean Publication No. 2002-00349.

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