Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2004-03-08

2008-07-01

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S479000, C438S485000, C438S706000, C438S710000, C257S223000, C257S227000, C257SE21094, C257SE21104, C257SE21121

Reexamination Certificate

active

07393723

ABSTRACT:
A method of manufacturing a semiconductor device that forms laminate layers includes the steps of reducing contamination containing the single bond of carbon on at least one part of a surface on which the laminate films are formed by activated hydrogen before the laminate films are formed, and forming the laminate films on the surface on which the laminate films are formed.

REFERENCES:
patent: 3652331 (1972-03-01), Yamazaki
patent: 3847659 (1974-11-01), Sobajima et al.
patent: 4910153 (1990-03-01), Dickson
patent: 4980022 (1990-12-01), Fujimura et al.
patent: 5057187 (1991-10-01), Shinagawa et al.
patent: 5354698 (1994-10-01), Cathey, Jr.
patent: 5480684 (1996-01-01), Sandhu
patent: 5525536 (1996-06-01), Ueda
patent: 5543648 (1996-08-01), Miyawaki
patent: 5567271 (1996-10-01), Chu et al.
patent: 5620906 (1997-04-01), Yamaguchi et al.
patent: 5631484 (1997-05-01), Tsoi et al.
patent: 5637512 (1997-06-01), Miyasaki et al.
patent: 5773201 (1998-06-01), Fujimura et al.
patent: 5837614 (1998-11-01), Yamazaki et al.
patent: 5866932 (1999-02-01), Yamazaki et al.
patent: 5885361 (1999-03-01), Kikuchi et al.
patent: 6025630 (2000-02-01), Yamazaki et al.
patent: 6177302 (2001-01-01), Yamazaki et al.
patent: 6228751 (2001-05-01), Yamazaki et al.
patent: 6703264 (2004-03-01), Yamazaki et al.
patent: 2002/0055211 (2002-05-01), Sakai et al.
patent: 59-011629 (1984-01-01), None
patent: 63-038233 (1988-02-01), None
patent: 01-023538 (1989-01-01), None
patent: 403270132 (1991-12-01), None
patent: 04-096226 (1992-03-01), None
patent: 04-177735 (1992-06-01), None
patent: 05-218368 (1993-08-01), None
patent: 05-239649 (1993-09-01), None
patent: 05-291220 (1993-11-01), None
patent: 406084862 (1994-03-01), None
patent: 06-232059 (1994-08-01), None
patent: 06-244103 (1994-09-01), None
patent: 06-244104 (1994-09-01), None
patent: 06-302591 (1994-10-01), None
patent: 07-074366 (1995-03-01), None
patent: 09-246181 (1997-09-01), None
patent: 05-021409 (1999-01-01), None
Wolf:Silicon Processing for the VLSI Era, vol. 1, pp. 516-517; 1986.

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