Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-31
2008-03-25
Clark, S. V. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S682000
Reexamination Certificate
active
07348273
ABSTRACT:
A method of manufacturing a semiconductor device that can inhibit transformation of an NiSi layer into a disilicide is to be provided. An NiSi layer is formed on gate electrodes and source/drain regions in both of a P-MOS transistor and a N-MOS transistor (a silicide layer formation step). A direct nitride layer is formed on an entire region including the NiSi layer (a nitride layer formation step). Then an element that can increase heat-resisting temperature of the NiSi layer is implanted into the NiSi layer (an element implantation step). As a result, heat-resisting property of the NiSi layer can be increased, and thereby the NiSi layer can be inhibited from being transformed into a disilicide.
REFERENCES:
patent: 6239452 (2001-05-01), Xiang et al.
patent: 6255214 (2001-07-01), Wieczorek et al.
patent: 6274511 (2001-08-01), Wieczorek et al.
patent: 6444578 (2002-09-01), Cabral et al.
patent: 6890854 (2005-05-01), Lee et al.
patent: 6960781 (2005-11-01), Currie et al.
patent: 6977194 (2005-12-01), Belyansky et al.
patent: 7078285 (2006-07-01), Suenaga
patent: 2003/0235984 (2003-12-01), Besser et al.
patent: 2005/0090067 (2005-04-01), Jawarani
patent: 2005/0112829 (2005-05-01), Jawarani et al.
patent: 2005/0202664 (2005-09-01), Jawarani
patent: 05-090293 (1993-04-01), None
“Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions”, Cheng et al, Thin Solid Films 355-356 (1999), pp. 412-416.
“Nickel Silicde Formation on Si(100) and Poly-Si with a Presilicide N2 Implantation” Lee et al, Journal of Elelctronic Materials,vol. 30, 2001, pp. 1554-1559.
“Improved NiSi Salicide Process Using Presilicide N2 Implant for MOSFETs”, Lee et al, IEEE Elecrton Device Letters,vol. 21, No. 12, Dec. 2000, pp. 566-568.
Clark S. V.
NEC Electronics Corporation
Young & Thompson
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