Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2007-02-06

2007-02-06

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S626000, C438S627000, C438S629000, C438S631000, C438S632000, C438S633000, C438S637000, C438S643000, C438S645000, C438S646000, C438S648000, C438S653000, C438S656000, C438S660000, C438S663000, C438S669000, C438S672000, C438S674000, C438S675000, C257SE21304

Reexamination Certificate

active

10724111

ABSTRACT:
On a substrate are sequentially formed a first interconnection203, a diffusion barrier film205and a second insulating film207, and on the upper surface of the second insulating film207is then formed a sacrificial film213. Next, a via hole211and an interconnection trench217are formed, and on the sacrificial film213are then formed a barrier metal film219and a copper film221. CMP for removing the extraneous copper film221and barrier metal film219are conducted in a two-step process, i. e., the first polishing where polishing is stopped on the surface of the barrier metal film219and the second polishing where the remaining barrier metal film219and the tapered sacrificial film213are polished.

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