Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2007-12-11

2007-12-11

Sefer, A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257SE21599, C257SE29257

Reexamination Certificate

active

10817904

ABSTRACT:
A semiconductor device manufacturing method comprises forming a pn column so that the pn column is designed to have a strip form in the section of the substrate and have a repetitive pattern of a p-conduction type and an n-conduction type on the substrate surface over an area where plural semiconductor devices having the same structure are formed in a semiconductor substrate, forming residual constituent elements of the plural semiconductor devices having the same structure in areas where the repetitive patterns are located while the pn column serves as a part of the constituent element of each semiconductor device, and dicing the individual semiconductor devices into chips from the area where the plural semiconductor devices having the same structure are formed.

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Second Office Action from Chinese Patent Office issued on Apr. 13, 2007 for the corresponding Chinese patent application No. 2004100472390 (a copy and English translation thereof).
First Office Action from Chinese Patent Office issued on Oct. 13, 2006 for the corresponding Chinese patent application No. 2004100472390 (a copy and English translation thereof).

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