Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-16
2007-10-16
Tran, Long K. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S620000, C438S700000, C438S701000, C438S703000, C257SE23001, C257SE23141, C257SE21244, C257S700000
Reexamination Certificate
active
11485976
ABSTRACT:
A method of manufacturing a semiconductor integrated circuit device is provided including forming a first insulating film comprised of fluorine-containing silicon oxide over a main surface of a semiconductor substrate is formed together with forming a second insulating film comprising silicon oxide as a major component, forming a third insulating film comprising silicon carbide as a major component, and forming a fourth insulating film comprised of fluorine-containing silicon oxide. The fourth insulating film is removed at a wiring groove-forming region thereof by dry etching using a first photoresist film as a mask. A first conductive layer is buried inside the wiring groove and the first conductive layer is removed from outside of the wiring groove by a chemical mechanical polishing method, thereby forming a first wiring including the first conductive layer inside the wiring groove.
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Aoki Hideo
Miura Noriko
Oomori Kazutoshi
Oshima Takayuki
Tamaru Tsuyoshi
Antonelli, Terry Stout & Kraus, LLP.
Renesas Technology Corp.
Tran Long K.
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