Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1983-09-23

1985-08-06

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29576W, 29580, 148 15, 148148, 156647, 156648, 156653, 156657, 156662, 357 49, 427 93, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

045334293

ABSTRACT:
In a LOCOS process, depressions are formed in a semiconductor body, and are filled by means of oxidation. The bottom and side walls of the depressions are coated with a double layer including an oxide and an oxidation-resistant material. This double layer is removed from the bottom of the depression and under-etching below the sidewalls under the oxidation-resistant layer is carried out to form cavities. As a result the remaining portions of the oxidation-resistant material are lifted along the surfaces of the side walls. With oblique walls for the depression, a high accuracy as to the size of active semiconductor regions can then be obtained with respect to an original mask.

REFERENCES:
patent: 4256514 (1981-03-01), Pogge
patent: 4326332 (1982-04-01), Kenney
patent: 4356211 (1982-10-01), Riseman
patent: 4398992 (1983-08-01), Fang et al.
patent: 4472240 (1984-09-01), Kameyama

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