Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2007-04-17

2007-04-17

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S428000, C438S430000, C438S589000, C438S259000, C438S270000, C257SE21564, C257SE21577, C257SE21166, C257SE21583, C257SE21585

Reexamination Certificate

active

11147312

ABSTRACT:
In a method of manufacturing a semiconductor device, a first trench is formed in a first region of a substrate and a second trench is formed in a second region of the substrate different from the first region. A depth of the first trench is less than that of the second trench. An insulation layer is formed in the second trench, so that semiconductor structures in the first trench are electrically isolated, and a conductive layer fills the first trench and extends above the first trench.

REFERENCES:
patent: 4685196 (1987-08-01), Lee et al.
patent: 5179038 (1993-01-01), Kinney et al.
patent: 5455194 (1995-10-01), Vasquez et al.
patent: 5998835 (1999-12-01), Furukawa et al.
patent: 2002/0056872 (2002-05-01), Baliga
patent: 2005/0042833 (2005-02-01), Park et al.

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