Method of manufacturing a semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S639000, C438S129000

Reexamination Certificate

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10431385

ABSTRACT:
To ensure the connectability of wiring lines in a semiconductor device having terminals or reservoirs, plural terminals of a cell, which constitutes the semiconductor device, are each formed in a shape having a length corresponding to two or more lattice points. The terminals are arranged so that one or more lattice points are interposed between adjacent terminals. Among the terminals, as to terminals that are adjacent to each other in their shorter direction, it is allowable for them to partially overlap each other in their shorter direction. In this state, second-layer wiring lines are connected to the terminals via through holes, whereby reservoirs can be generated at the terminals, respectively.

REFERENCES:
patent: 5168342 (1992-12-01), Shibata
patent: 5770519 (1998-06-01), Klein et al.
patent: 6515511 (2003-02-01), Sugibayashi et al.
patent: 57-112050 (1982-07-01), None
patent: 9-266249 (1997-10-01), None
patent: 10-233442 (1998-09-01), None
patent: 2000-332106 (2000-11-01), None
patent: 2001-44196 (2001-02-01), None
patent: 2002-76114 (2002-03-01), None
patent: 2002-076114 (2002-03-01), None

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