Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2006-06-13

2006-06-13

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S586000, C438S643000, C438S683000

Reexamination Certificate

active

07060609

ABSTRACT:
A method of manufacturing a semiconductor device is disclosed wherein a tungsten single atomic layer is deposited in a contact or via hole of a silicon substrate. A tungsten nitride (WN) layer is formed by plasma processing the tungsten single atomic layer using an atomic layer deposition process, which is repeated to form the tungsten nitride layer having a desired thickness as the barrier metal. A tungsten layer is then deposited on the semiconductor substrate to fill the contact hole. The tungsten nitride layer and the tungsten layer are in-situ deposited in a same reaction chamber for tungsten process. Accordingly, the step coverage of the tungsten nitride layer, is improved, thus reducing the contact defects of the fine contact hole, which has a high aspect ratio.

REFERENCES:
patent: 6139700 (2000-10-01), Kang et al.
patent: 6391785 (2002-05-01), Satta et al.
patent: 6482733 (2002-11-01), Raaijmakers et al.
patent: 2004/0115913 (2004-06-01), Jung et al.

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