Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-07-11
2006-07-11
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C438S687000
Reexamination Certificate
active
07074716
ABSTRACT:
The present invention relates to a method of manufacturing a semiconductor device which may stably transfer an electrical signal by forming a plurality of via holes and contact holes to an underlying conductive layer. According to the present invention, even though a contact or via is electrically shorted, it is possible to stably transfer the electrical signal through the other contact hole(s) or via hole(s). The present method includes: forming a first conductive line on a semiconductor substrate; forming an insulating layer on the semiconductor substrate and the first conductive line; forming a plurality of via holes by selectively etching the insulating layer in order to expose the first conductive line; forming a metal barrier on top of the insulating layer and in the via holes; and forming a plug by depositing a conductive layer sufficiently to fill the via holes, and then planarizing the conductive layer to coplanarity with the insulating layer.
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patent: 6326301 (2001-12-01), Venkatesan et al.
patent: 6380003 (2002-04-01), Jahnes et al.
patent: 6498399 (2002-12-01), Chung et al.
patent: 6734090 (2004-05-01), Agarwala et al.
Kim Ji A
Lee Jae Suk
Dang Trung
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
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