Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2006-01-03

2006-01-03

Nelms, David (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S481000, C438S486000, C438S487000, C438S488000, C438S489000, C438S495000, C438S499000

Reexamination Certificate

active

06982212

ABSTRACT:
In the method of manufacturing a semiconductor device (1) with a semiconductor body (2), a doped zone (3) is formed in the semiconductor body (2). The semiconductor body (2) has a crystalline surface region (4), which crystalline surface region (4) is at least partly amorphized so as to form an amorphous surface layer (5). The amorphization is achieved by irradiating the surface (6) with a radiation pulse (7) which is absorbed by the crystalline surface region (4). The radiation pulse (7) has a wavelength which is chosen such that the radiation is absorbed by the crystalline surface region (4), and the energy flux of the radiation pulse (7) is chosen such that the crystalline surface layer (5) is melted. The method is useful for making ultra-shallow junctions.

REFERENCES:
patent: 4535220 (1985-08-01), Cullis et al.
patent: 5950078 (1999-09-01), Maekawa et al.
patent: 5953615 (1999-09-01), Yu
patent: 6777317 (2004-08-01), Seibel et al.
Patent Abstracts of Japan vol. 014, No. 012 (E-971) Jan. 11, 1990 & JP 01 256124 (Ricoh Co Ltd), Oct. 12, 1989: Abstract.

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