Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2005-08-09

2005-08-09

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C257S336000, C257S337000, C257S338000

Reexamination Certificate

active

06927110

ABSTRACT:
A method is provided for manufacturing a semiconductor device with a highly controlled impurity layer without influence from the heat treatment involved in epitaxial growth. The method comprises: forming a dummy gate layer above a semiconductor substrate; forming a spacer layer closely adjacent to each side of the dummy gate layer; selectively forming a silicon layer by epitaxial growth above the semiconductor substrate; forming a gate electrode after removing the dummy gate layer; forming a source/drain region by introducing an impurity into the semiconductor substrate through the silicon layer; and changing the silicon layer into silicide.

REFERENCES:
patent: 6117741 (2000-09-01), Chatterjee et al.
patent: 6515320 (2003-02-01), Azuma et al.
patent: 2002/0076885 (2002-06-01), Chen
patent: 2000-049348 (2000-02-01), None
Communication from Japanese Patent Office re: counterpart application.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3470799