Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2005-07-05

2005-07-05

Chaudhari, Chandra (Department: 2829)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

C438S465000, C438S977000

Reexamination Certificate

active

06913985

ABSTRACT:
A peeling layer (13) and semiconductor thin film (20a) are formed on a first substrate (11), individual support materials (19) are formed thereupon, grooves (23) penetrating the semiconductor thin film and reaching the peeling layer (13) are formed in the semiconductor thin film (20a) by etching using the individual support materials (19) as a mask so as to divide the semiconductor thin film (20a) into a plurality of semiconductor thin film pieces (20) and form a plurality of assemblies of the semiconductor thin film pieces (20) and the individual support materials (19) fixed thereto, the semiconductor thin film pieces (20) are separated from the first substrate (11) while the individual support materials (19) remain fixed to the semiconductor thin film pieces (20), and they are then affixed to a second substrate (31). The invention facilitates handling of semiconductor thin film pieces.

REFERENCES:
patent: 5466631 (1995-11-01), Ichikawa et al.
patent: 6274518 (2001-08-01), Yuri et al.
patent: 6440822 (2002-08-01), Hayama et al.
patent: 6613610 (2003-09-01), Iwafuchi et al.
patent: 6802926 (2004-10-01), Mizutani et al.
patent: 7-202265 (1995-08-01), None
“High Efficiency GaAs Thin Film Solar Cells by Peeled Film Technology”, Makoto Konagai et al.: Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, Ohokayama, Meguro-ku, Tokyo 152, Japan; Journal of Crystal Growth 45 (1978); 4 pages.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3409152