Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2005-09-06

2005-09-06

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S660000, C438S309000, C438S202000

Reexamination Certificate

active

06939802

ABSTRACT:
A semiconductor device having stable device characteristics, in which variation in contact resistance between silicon and poly-silicon or between poly-silicon and poly-silicon is reduced. In a cleaning process before forming an upper layer poly-silicon film, a treatment is conducted to form a thin uniform oxide film on the surface of silicon. After forming the upper layer poly-silicon film11,a removed portion is uniformly formed on the thin uniform oxide film by applying a short time, high temperature annealing treatment.

REFERENCES:
patent: 4769337 (1988-09-01), Maeda
patent: 5194404 (1993-03-01), Nagatomo
patent: 5328867 (1994-07-01), Chien et al.
patent: 6472287 (2002-10-01), Wakabayashi
patent: 61-080863 (1994-06-01), None
patent: 9-320983 (1997-12-01), None

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