Method of manufacturing a semiconductor device

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor

Reexamination Certificate

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C438S096000, C438S097000, C438S308000, C438S365000, C438S368000, C438S378000, C438S482000, C438S488000, C257S052000, C257S063000, C257S065000, C257S066000

Reexamination Certificate

active

06872638

ABSTRACT:
A method of performing irradiation of laser light is given as a method of crystallizing a semiconductor film. However, if laser light is irradiated to a semiconductor film, the semiconductor film is instantaneously melted and expands locally. The temperature gradient between a substrate and the semiconductor film is precipitous, distortions may develop in the semiconductor film. Thus, the film quality of the crystalline semiconductor film obtained will drop in some cases. With the present invention, distortions of the semiconductor film are reduced by heating the semiconductor film using a heat treatment process after performing crystallization of the semiconductor film using laser light. Compared to the localized heating due to the irradiation of laser light, the heat treatment process is performed over the entire substrate and semiconductor film. Therefore, it is possible to reduce distortions formed in the semiconductor film and to increase the physical properties of the semiconductor film.

REFERENCES:
patent: 4256681 (1981-03-01), Lindmayer
patent: 4814292 (1989-03-01), Sasaki et al.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5639698 (1997-06-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5663077 (1997-09-01), Adachi et al.
patent: 5773327 (1998-06-01), Yamazaki et al.
patent: 5824573 (1998-10-01), Zhang et al.
patent: 5854096 (1998-12-01), Ohtani et al.
patent: 5879977 (1999-03-01), Zhang et al.
patent: 5904770 (1999-05-01), Ohtani et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5923997 (1999-07-01), Mitanaga et al.
patent: 5948496 (1999-09-01), Kinoshita et al.
patent: 5953597 (1999-09-01), Kusumoto et al.
patent: 6014944 (2000-01-01), Aklufi et al.
patent: 6066516 (2000-05-01), Miyasaka
patent: 6184068 (2001-02-01), Ohtani et al.
patent: 6281057 (2001-08-01), Aya et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6319761 (2001-11-01), Zhang et al.
patent: 6326248 (2001-12-01), Ohtani et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6455360 (2002-09-01), Miyasaka
patent: 6509579 (2003-01-01), Takeya et al.
patent: 20010003659 (2001-06-01), Aya et al.
patent: 20020119585 (2002-08-01), Yamazaki et al.
patent: 20020146868 (2002-10-01), Miyasaka
patent: 20030089909 (2003-05-01), Miyairi et al.
patent: 0 651 431 (1995-05-01), None
patent: 06-163409 (1994-06-01), None
patent: 07-183540 (1995-07-01), None
patent: 11-074536 (1999-03-01), None
patent: 2002-150890 (2000-05-01), None
patent: 2002-076349 (2002-03-01), None
patent: 2002-305148 (2002-10-01), None
Kimura et atl., “Device Simulation of Interface Roughness in Laser-Crystallized p-Si TFT's”, pp. 263-266, 1999, AM-LCD.
Abe et al., “High-Performance Poly-Crystalline Silicon TFTs Fabricated Using the SPC and ELA Methods”, pp. 85-88, Jul. 9-10, 1998, AM-LCD.
Specifications and Drawings for Application Serial No. 10/081,767, “Method of Manufacturing a Semiconductor Device” Filing Date: Feb. 25, 2002, Inventors: Shunpei Yamazaki et al.
Specifications and Drawings for Application Serial No. 10/056,054, “Method for Manufacturing a Semiconductor Device”.
Australian Patent Office Search Report; Application No. SG 200200835-7; Filed Feb. 18, 2002; (Apr. 20,2004).

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