Fishing – trapping – and vermin destroying
Patent
1993-04-15
1994-07-12
Thomas, Tom
Fishing, trapping, and vermin destroying
437 44, 437 59, 437228, 156643, H01L 21265
Patent
active
053288602
ABSTRACT:
A method for manufacturing BiCMOS semiconductor devices in which an oxide layer formed on the surface of a semiconductor substrate for the purpose of facilitating formation of spacers adjacent to sidewalls of the gates of the MOS transistors thereof is only partially removed, by using a dry etching process, to thereby leave a residual oxide layer, which is then removed, by using a wet etching process, to thereby form the spacers. Alternatively, all portions of the oxide layer except a portion thereof overlying the base-emitter region of the bipolar transistor of the BiCMOS device is removed, thereby precluding the necessity of etching the oxide layer away at the base-emitter junction. In either case, the DC forward current gain Hfe and linearity of the bipolar transistor of the BiCMOS device are enhanced.
REFERENCES:
patent: 4690728 (1987-09-01), Tsang et al.
Kim Gyu C.
Kim Young O.
Lee Yong J.
Yi Duk M.
Donohoe Charles R.
Nguyen Tuan
Samsung Electronics Co,. Ltd.
Thomas Tom
Westerlund Robert A.
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