Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1997-01-31

1999-09-21

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438448, H01L 2176

Patent

active

059566000

ABSTRACT:
An element isolation region is formed in a silicon substrate by initially depositing an insulating film and first nitride film thereon, forming an opening therethrough exposing the substrate, and etching the substrate to form a groove. A polysilicon film and second nitride film are successively deposited, and the second nitride film is anisotropically etched to expose the polysilicon film at the bottom of the groove. The silicon substrate is then thermally oxidized using the first and second nitride films as a mask to form the element isolation region. In other embodiments, an oxide film is formed at the bottom of the groove prior or subsequent to deposition of the polysilicon film.

REFERENCES:
patent: 5457067 (1995-10-01), Han
"The Swami- A Defect Free and Near-Zero Bird's Beak Local Oxidation Process and it's Application in VLSI Technology," by K.Y. Chiu et al., IEDM 82.
"A Bird's Beak Free Local Oxidation Technology Feasible for VSLI Circuits Fabrication," by Kuang Y. Chiu et al., IEEE 1982.

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