Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2011-07-05

2011-07-05

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S311000, C438S672000, C438S687000, C257SE21006, C257SE21054, C257SE21077, C257SE21058, C257SE21267, C257SE21278, C257SE21293, C257SE21311, C257SE21319, C257SE21646

Reexamination Certificate

active

07972941

ABSTRACT:
A gate structure is formed on a substrate. An insulating interlayer is formed covering the gate structure. The substrate is heat treated while exposing a surface of the insulating interlayer to a hydrogen gas atmosphere. A silicon nitride layer is formed directly on the interlayer insulating layer after the heat treatment and a metal wiring is formed on the insulating interlayer. The metal wiring may include copper. Heat treating the substrate while exposing a surface of the interlayer insulating layer to a hydrogen gas atmosphere may be preceded by forming a plug through the first insulating interlayer that contacts the substrate, and the metal wiring may be electrically connected to the plug. The plug may include tungsten.

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KR Office Action & English Translation of Corresponding KR App. No. 10-2007-006611, Mailed Jul. 11, 2008 (6 pgs.).

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