Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1996-11-25

2000-10-31

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438303, 438305, 438306, H01L 2184

Patent

active

061401641

ABSTRACT:
A resist mask used for forming a region of aluminum is made small by ashing to form a new mask. Anodic oxidation is carried out with an anode of the region of aluminum to form porous anodic oxidation films. In this anodic oxidation step, the mask can control the directions of openings of the porous anodic oxidation films (anisotropy). If the impurity ions are implanted using the porous anodic oxidation films as masks, the amount of impurity ions implanted into an active layer can be adjusted. Using this, an LDD region can be formed.

REFERENCES:
patent: 5561075 (1996-10-01), Nakazawa
patent: 5576231 (1996-11-01), Konuma
patent: 5620905 (1997-04-01), Konuma

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