Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1994-05-31

1995-11-28

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437203, 437919, H01L 218242

Patent

active

054707781

ABSTRACT:
A semiconductor device in which a trench-shaped groove (20) and a depression (100), which is formed by removing at least part of the area above and adjacent to the groove, are formed to be continuous on one side of the semiconductor substrate, in which aforementioned groove and aforementioned depression is buried a polysilicon conductive layer (103), the top of which conductive layer is converted into an insulator (102), the bottom of which insulating film (102) is contained in the depression (100).

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