Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

1999-04-26

2000-05-30

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438631, 438666, 438926, H01L 214763

Patent

active

060690674

ABSTRACT:
The semiconductor of this invention is provided with a first inter-layer insulating film formed on the surface of a semiconductor substrate to a first film thickness; a plurality of first wiring patterns formed on the surface of the first inter-layer insulating film; a dummy pattern formed between the first wiring patterns and insulated electrically from the wiring patterns; a second inter-layer insulating film formed from the first inter-layer insulating film to a second film thickness so as to cover the surfaces of the first inter-layer insulating film, the first wiring patterns, the dummy pattern; and second wiring patterns formed on the surface of the second inter-layer insulating film and wherein the dummy pattern has no planar overlapped portion with respect to the second wiring patterns, that is, it is separated from the second wiring patterns in top view.

REFERENCES:
patent: 5239201 (1993-08-01), Asano
patent: 5281555 (1994-01-01), Cho
patent: 5459093 (1995-10-01), Kuroda et al.
patent: 5659202 (1997-08-01), Ashida
patent: 5798298 (1998-08-01), Yang et al.
patent: 5801421 (1998-09-01), Sher et al.
patent: 5854128 (1998-12-01), Ma et al.
patent: 5998814 (1999-12-01), Yamaha et al.

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