Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Patent
1993-12-01
1998-02-24
Quach, T. N.
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
438558, 438565, 438683, H01L 21223, H01L 21225
Patent
active
057211752
ABSTRACT:
According to this invention, a method of manufacturing a semiconductor device includes the steps of forming an impurity diffusion layer of a second conductivity type on a semiconductor substrate of a first conductivity type, forming a transition metal compound layer containing a constituent element of the semiconductor substrate on the impurity diffusion layer, and doping an impurity of the second conductivity type in the metal compound layer by annealing in a reducing atmosphere. A semiconductor device includes a semiconductor substrate of a first conductivity type, an impurity diffusion layer of a second conductivity type formed in the semiconductor substrate of the first conductivity type, and a conductive metal compound layer formed on the impurity diffusion layer, wherein the conductive metal compound layer consists of at least a transition metal, a semiconductor element, and an impurity element of the second conductivity type which is an impurity element of the second conductivity type, and the impurity element of the second conductivity in the conductive metal compound layer is uniformly distributed.
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Kunishima Iwao
Suguro Kyoichi
Kabushiki Kaisha Toshiba
Quach T. N.
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