Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2000-06-12
2004-11-23
Wille, Douglas (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S172000
Reexamination Certificate
active
06821829
ABSTRACT:
FIELD OF THE INVENTION
This invention relates, in general, to electronics, and more particularly, to methods of manufacturing semiconductor components and semiconductor components thereof.
BACKGROUND OF THE INVENTION
Heterostructure Insulated Gate Field Effect Transistors (HIGFETs) are well-known to those skilled in the art and are used for a variety of applications including complimentary digital circuits and enhancement mode power amplifier circuits. Some prior HIGFETs are formed by growing a gallium arsenide capping layer of three nanometers over a heterostructure substrate. The heterostructure substrate includes an aluminum gallium arsenide barrier layer over an indium gallium arsenide channel layer, which in turn is located over a conducting semiconductor layer. One problem with these prior HIGFETs is their large variability in output current.
Accordingly, a need exists for a method of manufacturing a semiconductor component and a semiconductor component thereof that has lower variability in direct current (dc) and radio frequency (rf) output currents and has other improved electrical performance characteristics for digital and analog circuit applications.
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Johnson Eric S.
Peatman William C.
Reyes Adolfo C.
Freescale Semiconductor Inc.
Wille Douglas
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