Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2005-08-16
2005-08-16
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S221000, C438S222000, C438S223000, C438S224000, C438S229000, C438S296000, C438S424000, C438S433000, C438S694000, C438S700000, C438S706000, C438S723000, C438S724000, C438S742000, C438S745000, C438S753000
Reexamination Certificate
active
06930027
ABSTRACT:
A method of manufacturing a semiconductor component includes forming a first electrically insulating layer (120) and a second electrically insulating layer (130) over a semiconductor substrate (110). The method further includes etching a first trench (140) and a second trench (150) through the first and second electrically insulating layers and into the semiconductor substrate, and etching a third trench (610) through a bottom surface of the second trench and into the semiconductor substrate. The third trench has a first portion (920) and a second portion (930) interior to the first portion. The method still further includes forming a third electrically insulating layer (910) filling the first trench and the first portion of the third trench without filling the second portion of the third trench, and also includes forming a plug layer (1010) in the second portion of the third trench.
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Bose Amitava
Butner Michael C.
Hui Paul
Khemka Vishnu
Parthasarathy Vijay
Bryan Cave LLP
Chen Eric B.
Freescale Semiconductor Inc.
Norton Nadine G.
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