Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Complementary bipolar transistors
Reexamination Certificate
2000-03-01
2002-12-03
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Complementary bipolar transistors
C438S325000, C438S327000
Reexamination Certificate
active
06489211
ABSTRACT:
RELATED APPLICATION
U.S. Pat. application No., 09/516,350, filed on the same date herewith and assigned to the same assignee, is a related application.
FIELD OF THE INVENTION
This invention relates, in general, to semiconductor devices and, more particularly, to a radio frequency bipolar transistor and method of manufacture thereof.
BACKGROUND OF THE INVENTION
For a transistor to operate efficiently at high frequencies, the transistor should have, among other characteristics, a small base transit time, a low intrinsic base resistance, and a small, linear extrinsic base-to-collector capacitance. Radio frequency (RF) bipolar transistors typically have a plurality of emitter finger regions in a common base well. The frequency response of these transistors is lithographically established by a width of the emitter region in the common base well. However, these transistors have a large base transit time, a high base resistance, and an excessive, nonlinear extrinsic base-to-collector capacitance.
Accordingly, a need exists for a semiconductor component capable of operating efficiently at high frequencies. The bipolar transistors of the component should have smaller base transit times, lower intrinsic base resistances, and smaller, more linear extrinsic base-to-collector capacitances, when compared to the prior art.
REFERENCES:
patent: 5067002 (1991-11-01), Zdebel et al.
Balda Raymond J.
Freeman, Jr. John L.
Johnsen Robert J.
Paulsen James D.
Pryor Robert A.
Le Dung Anh
Motorola Inc.
LandOfFree
Method of manufacturing a semiconductor component does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor component, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor component will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2966082