Semiconductor device manufacturing: process – Making passive device – Trench capacitor
Reexamination Certificate
2005-08-02
2005-08-02
Wilson, Allan R. (Department: 2815)
Semiconductor device manufacturing: process
Making passive device
Trench capacitor
C438S244000, C438S396000
Reexamination Certificate
active
06924206
ABSTRACT:
A semiconductor capacitor configured so as to use buried wirings, as electrodes, formed in an interlayer dielectric is provided on a semiconductor substrate which is capable of preventing an increase in a number of manufacturing processes with occurrence of parasitic capacity being suppressed. The semiconductor capacitor has a capacitive insulating film made up of an etching stopper film formed only in a region being sandwiched between a via plug serving as an upper electrode and a lower electrode, in which the capacitive insulating film is not formed in a region other than the facing region.
REFERENCES:
patent: 6300682 (2001-10-01), Chen
patent: 6313003 (2001-11-01), Chen
patent: 6387775 (2002-05-01), Jang et al.
patent: 6391707 (2002-05-01), Dirnecker et al.
patent: 6413815 (2002-07-01), Lai et al.
patent: 6545306 (2003-04-01), Kim et al.
patent: 6596579 (2003-07-01), Randazzo et al.
patent: 6713840 (2004-03-01), Lee et al.
patent: 1221715 (2002-07-01), None
patent: 2000-228497 (2000-08-01), None
patent: 2001-274328 (2001-10-01), None
patent: 2003-51501 (2003-02-01), None
NEC Electronics Corporation
Scully Scott Murphy & Presser
Wilson Allan R.
LandOfFree
Method of manufacturing a semiconductor capacitive element... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor capacitive element..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor capacitive element... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3445712