Method of manufacturing a semiconductor apparatus with a...

Details Method of manufacturing a semiconductor apparatus with a... Method of manufacturing a semiconductor apparatus with a...

2005-10-11

2005-10-11

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S673000, C438S780000, C438S978000

Reexamination Certificate

active

06953746

ABSTRACT:
When a hole pattern is formed on a film to be processed, a matching deviation margin at a lithography step is reserved by making a diameter of a bottom of a hole substantially equal to a diameter of an aperture of the hole. The method for manufacturing the semiconductor apparatus includes the steps of: forming a (first) mask material film on a film to be processed; forming a tapered open pattern on the (first) mask material film; and etching the film to be processed by using the (first) mask material film as a mask.

REFERENCES:
patent: 4409319 (1983-10-01), Colacino et al.
patent: 4702792 (1987-10-01), Chow et al.
patent: 4816115 (1989-03-01), Horner et al.
patent: 5034091 (1991-07-01), Trask et al.
patent: 5750441 (1998-05-01), Figura et al.
patent: 5913148 (1999-06-01), Hills
patent: 5981913 (1999-11-01), Kadomura et al.
patent: RE36663 (2000-04-01), Smith et al.
patent: 6171951 (2001-01-01), Lee et al.
patent: 6387798 (2002-05-01), Loke et al.
patent: 6399286 (2002-06-01), Liu et al.
patent: 6514868 (2003-02-01), Hui et al.
patent: 6548347 (2003-04-01), Juengling
patent: 6649517 (2003-11-01), Teh et al.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor apparatus with a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor apparatus with a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor apparatus with a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3478588