Method of manufacturing a Schottky barrier tunnel transistor

Details Method of manufacturing a Schottky barrier tunnel transistor Method of manufacturing a Schottky barrier tunnel transistor

2011-07-19

2011-07-19

Thomas, Toniae M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S581000, C257S486000, C257SE21165, C257SE21415, C257SE21425, C257SE21444, C257SE21619, C257SE29042, C257SE29148, C257SE29271

Reexamination Certificate

active

07981735

ABSTRACT:
Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at a semiconductor-metal junction as a tunnel barrier. The method includes the steps of: forming a semiconductor channel layer on an insulating substrate; forming a dummy gate on the semiconductor channel layer; forming a source and a drain at both sides of the dummy gate on the insulating substrate; removing the dummy gate; forming an insulating layer on a sidewall from which the dummy gate is removed; and forming an actual gate in a space from which the dummy gate is removed. In manufacturing the Schottky barrier tunnel transistor using the dummy gate, it is possible to form a high-k dielectric gate insulating layer and a metal gate, and stable characteristics in silicidation of the metal layer having very strong reactivity can be obtained.

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L.E. Calvet, et al; “Suppression of leakage current in Schottky barrier metal-oxide-semiconductor field-effect transistors”, Journal of Applied Physics, vol. 91, No. 2, Jan. 15, 2002, pp. 757-759.

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